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SAMSUNG SSD 9100 PRO 4TB, PCIe 5.0x4 M.2 2280, Seq. Read Speeds Up to 14,800MB/s, Best for AI Computing, Gaming, and Heavy Duty Workstations (MZ-VAP4T0B/AM)
- BREAKTHROUGH PCIe 5.0 PERFORMANCE: Supercharge your workflow and gaming with PCIe 5.0, boasting up to 14,800/13,400 MB/s sequential read/write speeds. Tackle massive files and power up your gaming with Gen5 - twice as fast as the 990 PRO SSD.
- EVERY TASK, TURBOCHARGED: Speed past productivity limits. With random read/write speeds up to 2,200K/2,600K IOPS, enjoy fast game loads, seamless AI apps, and efficient multitasking. Virtually no lag, no limits - just nonstop performance.
- THNK FAST, CREATE FASTER: With random read/write speeds of up to 2,200K/2,600K IOPS, the 9100 PRO SSD fuels seamless AI content creation, swift loads, and smooth gameplay. Work, play, and create at lightning speed.
- SPEED, WHENEVER YOU NEED: From laptops to desktop PCs, experience blazing PCIe 5.0 speeds and up to 8TB of storage. Perfect for video editing, gaming, and creative tasks, with the compatibility to match your device.
- STAY COOL, RUN FAST: Push limits, not temperatures. A 5nm controller boosts power efficiency up to 49% over the 990 PRO SSD, while advanced thermal control keeps performance smooth and reliable.
- BREAK FREE FROM STORAGE LIMITS: Expand your gaming horizons with up to 8TB of storage on the 9100 PRO. Enjoy vast space to grow your game library, save every title, and keep all your favorites without compromise. Unleash your full gaming potential - store, save, and conquer like never before.
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Samsung 9100 PRO 4TB SSD
The Samsung 9100 PRO MZ-VAP4T0B/AM is a 4TB internal solid state drive for consumer use. It combines a PCI-Express 5.0 x4 interface with the NVMe 2.0 protocol and delivers up to 14,800 MB/s sequential read and 13,400 MB/s sequential write performance. The listed 4TB configuration is suited to AI workloads, 4K/8K video rendering, advanced gaming, and high-performance tasks.
Specifications
- Capacity: 4TB
- Form factor: M.2 2280
- Memory components: Samsung V NAND TLC (V8)
- 4KB random read: Up to 2,200,000 IOPS
- 4KB random write: Up to 2,600,000 IOPS
- Terabytes written: 2400TB
- Encryption: Class 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667)
- Controller: In-House Controller
- Heatsink: without HeatSink
- Power consumption: 5.7mW device sleep (L1.2); 9.0W / 8.2W active read/write
- Dimensions: 22.15mm wide, 80.15mm deep, and 2.38mm high
- Weight: 9g
Warranty & Returns
Warranty, Returns, And Additional Information
Warranty
- Please contact the Seller directly for warranty information. Warranty information may also be found on the Manufacturer's website.
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Return Policies
- Return for refund within: 30 days
- Return for replacement within: 30 days
- This item is covered by BioStar Return Policy
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