Learn more about the SAMSUNG MZ-V8V500B/AM
Model| Brand | SAMSUNG |
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| Series | 980 |
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| Model | MZ-V8V500B/AM |
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| Device Type | Internal Solid State Drive (SSD) |
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| Used For | Consumer |
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Details| Form Factor | M.2 2280 |
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| Capacity | 500GB |
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| Memory Components | V-NAND MLC |
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| Interface | PCI-Express 3.0 x4, NVMe 1.4 |
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| Protocol | NVMe 1.4 |
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| Controller | Pablo |
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| Encryption | AES 256-bit Full Disk Encryption, TCG/Opal V2.0, Encrypted Drive (IEEE1667) |
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Performance| Max Sequential Read | Up to 3100 MBps |
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| Max Sequential Write | Up to 2600 MBps |
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| 4KB Random Read | QD1: 17,000 IOPS QD32: 400,000 IOPS |
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| 4KB Random Write | QD1: 54,000 IOPS QD32: 470,000 IOPS |
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| Terabytes Written (TBW) | 300TB |
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| MTBF | 1,500,000 hours |
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Features| Features | SOLID PERFORMANCE - Solid performance with Seq. Read/Write speeds up to 3,100/2,600 MB/s - Intelligent TurboWrite 2.0 maximize full potential performance with enlarged TurboWrite region up to 5.5 times - Host Memory Buffer (HMB) links DRAM in the host directly to the 980 to overcome performance restrain from DRAMless - Full Power Mode through Magician 6.3 allows the 980 to run at peak level for nonstop for a consistent high performance
PROVEN RELIABILITY - Uncompromising endurance with reliability up to 300TBW - Thermal control solution provides 50% less heat vs. the 970 EVO
OPTIMIZED EFFICIENCY - Power consumption is reduced up to 32% and power efficiency is improved up to 56% vs. 970 EVO |
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Environmental| Power Consumption (Idle) | Max. 45 mW |
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| Power Consumption (Active) | 4.3W |
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| Max Shock Resistance | 1,500G & 0.5 ms (Half sine) |
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Dimensions & Weight| Height | 2.38mm |
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| Width | 22.15mm |
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| Depth | 80.15mm |
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Additional Information| First Listed on Newegg | March 29, 2021 |
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Customer Reviews of the SAMSUNG MZ-V8V500B/AM