Learn more about the SAMSUNG MZ-V8V500BW
Model| Brand | SAMSUNG |
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| Series | 980 |
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| Model | MZ-V8V500BW |
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| Device Type | Internal Solid State Drive (SSD) |
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| Used For | Consumer |
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Details| Form Factor | M.2 2280 |
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| Capacity | 500GB |
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| Memory Components | V-NAND 3-bit MLC |
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| Interface | PCI-Express 3.0 x4, NVMe 1.4 |
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| Controller | Pablo |
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Performance| Max Sequential Read | Up to 3100 MBps |
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| Max Sequential Write | Up to 2600 MBps |
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| 4KB Random Read | QD1: 17,000 IOPS QD32: 400,000 IOPS |
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| 4KB Random Write | QD1: 54,000 IOPS QD32: 470,000 IOPS |
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| MTBF | 1,500,000 hours |
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Features| Features | 300 TBW
TRIM Support: Supported
S.M.A.R.T Support: Supported
GC (Garbage Collection): Auto Garbage Collection Algorithm
Encryption Support: AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
Device Sleep Mode Support: Yes |
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Environmental| Power Consumption (Idle) | 45 mW |
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| Power Consumption (Active) | Average: 4.3W Maximum: 5.9W (Burst mode) |
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| Operating Temperature | 0°C ~ +70°C |
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| Max Shock Resistance | 1,500G & 0.5 ms (Half sine) |
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Dimensions & Weight| Height | 2.38mm |
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| Width | 22.15mm |
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| Depth | 80.15mm |
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| Weight | 8.00g |
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Additional Information| First Listed on Newegg | June 20, 2022 |
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Customer Reviews of the SAMSUNG MZ-V8V500BW