- Innovative 3D V-NAND Technology
- Incredible Read/Write Performance
- Enhanced Endurance and Reliability
- The Most Evolved SSD for Ultra-thin Laptops and PCs
Learn more about the SAMSUNG MZ-N5E250BW
Model| Brand | SAMSUNG |
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| Series | 850 EVO |
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| Model | MZ-N5E250BW |
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| Device Type | Internal SSD Single Unit Version |
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Details| Form Factor | M.2 2280 |
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| Capacity | 250GB |
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| Memory Components | 3D NAND |
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| Interface | SATA III |
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| Controller | MGX |
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| Cache | 512MB |
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Performance| Max Sequential Read | Up to 540 MBps |
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| Max Sequential Write | Up to 500 MBps |
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| 4KB Random Read | Up to 97,000 IOPS (4KB, QD32) Up to 10,000 IOPS (4KB, QD1) |
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| 4KB Random Write | Up to 89,000 IOPS (4KB, QD32) Up to 40,000 IOPS (4KB, QD1) |
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Environmental| Power Consumption (Idle) | 50 mW |
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| Power Consumption (Active) | Average: 2.4W Maximum: 3.7W (Burst mode) |
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| Operating Temperature | 0°C ~ +70°C |
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| Max Shock Resistance | 1500G & 0.5ms (Half sine) |
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Dimensions & Weight| Height | 2.30mm |
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| Width | 22.00mm |
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| Depth | 80.00mm |
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| Weight | 0.09 lb. |
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Additional Information| First Listed on Newegg | August 14, 2019 |
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Customer Reviews of the SAMSUNG MZ-N5E250BW