"sram memory"

• Part Number: KS3200D4M13516Gx2-Red
• CAS Latency: CL18
• Multi-channel Kit: Dual Channel Kit
• BIOS/Performance Profile: XMP 2.0
• Model #: KS3200D4M13516G2R

(157)

• CAS Latency: CL16
• Voltage: 1.35V
• Timing: 16-18-18-38
• Brand: Silicon Power
• Model #: SP032GXLZU320BDB

(171)

• CAS Latency: CL19
• Timing: 19-19-19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT-16G4SFD8266

(16)

• CAS Latency: CL16
• Voltage: 1.35V
• Timing: 16-18-18-38
• Brand: Silicon Power
• Model #: SP016GXLZU320BDB

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• CAS Latency: CL38
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 38-34-34-96
• Model #: CMH32GX5M2B6000Z38

(1,722)

• CAS Latency: CL22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Features: Optimized Compatibility with 10th / 11th Gen Intel Core Processors
• Model #: F4-3200C22S-16GRS

(6)

• CAS Latency: CL16
• Voltage: 1.35V
• Timing: 16-18-18-36
• Heat Spreader: Anodized Aluminum
• Model #: CMK64GX4M4C3200C16

• CAS Latency: CL18
• Voltage: 1.35V
• Timing: 18-22-22-42
• Recommend Use: AMD & Intel Compatible
• Model #: PVS416G360C8

(1)

• CAS Latency: CL40
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 40-50-50-96
• Model #: CMH64GX5M2D6000C40

(48)

• CAS Latency: CL17
• Timing: 17-17-17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT16G4SFD824A

(4)

• CAS Latency: CL40
• Voltage: 1.25V
• Multi-channel Kit: Dual Channel Kit
• Timing: 40-40-40-77
• Model #: CMH64GX5M2B5200C40W

• CAS Latency: CL40
• Voltage: 1.25V
• Multi-channel Kit: Dual Channel Kit
• Timing: 40-44-44-90
• Model #: CMH64GX5M2D5600Z40

• CAS Latency: CL18
• Voltage: 1.35V
• Timing: 18-20-20-40
• Recommend Use: AMD & Intel Compatible
• Model #: PVS432G360C8K

(2)

• CAS Latency: CL16
• Voltage: 1.35V
• Timing: 16-18-18-36
• Heat Spreader: Anodized Aluminum
• Model #: CMW64GX4M4C3466C16

(1)

• CAS Latency: CL32
• Voltage: 1.40V
• Multi-channel Kit: Dual Channel Kit
• Timing: 32-40-40-84
• Model #: CMH32GX5M2B6400C32W

(143)

• CAS Latency: CL46
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Part Number: CT2K64G56C46S5
• Model #: CT2K64G56C46S5

(143)

• CAS Latency: CL40
• Timing: 40-39-39
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Model #: CT32G48C40S5

(13)

• CAS Latency: CL30
• Voltage: 1.40V
• Multi-channel Kit: Dual Channel Kit
• Timing: 30-36-36-76
• Model #: CMK64GX5M2B6000Z30

(13)

• CAS Latency: CL16
• Voltage: 1.35V
• Timing: 16-18-18-36
• Recommend Use: AMD 300 Series / AMD 400 Series / AMD Ryzen Compatible / AMD TRX40 / AMD X470 / AMD X570 / High Performance or Gaming Memory
• Model #: CMT16GX4M2Z3200C16

• CAS Latency: CL34
• Voltage: 1.45V
• Multi-channel Kit: Dual Channel Kit
• Timing: 34-42-42-96
• Model #: CMH32GX5M2X7000C34

• Chipset: Major Brand Chipset
• CAS Latency: CL9
• Voltage: 1.50V
• Multi-channel Kit: Dual Channel Kit
• Model #: AT8G2D3D1333RD4N15V

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR2 Orignial Series 200-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 4GB (2 x 2GB)
• Type: 200-Pin DDR2 SO-DIMM
• Model #: MS6400-228K02-716

(131)

• CAS Latency: CL16
• Voltage: 1.35V
• Timing: 16-20-20-38
• Recommend Use: AMD 400 Series / AMD 500 Series / AMD X570 / Intel Z390
• Model #: CMK64GX4M2E3200C16

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR3 Orignial Series 204-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 8GB (2 x 4GB)
• Type: 204-Pin DDR3 SO-DIMM
• Model #: MS8500-428K02-722

(328)

• CAS Latency: CL9
• Timing: 9-9-9-28
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Model #: F3-1600C9D-16GRSL

(32)

• CAS Latency: CL16
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 16-18-18-38
• Model #: F4-3000C16D-16GVRB

(13)

• CAS Latency: CL16
• Voltage: 1.35V
• Timing: 16-20-20-38
• Recommend Use: Intel 100 Series / Intel 200 Series / Intel 300 Series / Intel 400 Series / Intel X299
• Model #: CMK16GX4M1D3000C16

• CAS Latency: CL40
• Voltage: 1.25V
• Multi-channel Kit: Dual Channel Kit
• Timing: 40-44-44-90
• Model #: CMK64GX5M2D5600Z40

(143)

• CAS Latency: CL40
• Timing: 40-39-39
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Model #: CT16G48C40S5

(143)

• CAS Latency: CL40
• Timing: 40-39-39
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Model #: CT2K32G48C40S5

(3)

• CAS Latency: CL46
• Voltage: 1.10V
• Features: 5600MT/s grants faster transmission speeds and higher bandwidth than DDR4 1.5x faster than standard 3200MT/s DDR4 to provide multi-core CPUs with extreme responsiveness Available in 8GB, 16GB, and 32GB module densities Doubled chip unit capacity compared to DDR4 (from 16GB to 32GB) for seamless multi-tasking Low voltage of 1.1V for less power consumption Improved reliability versus DDR4 with On-Die Error Correction Code (ECC) Optimized efficiency with two independent 32-bit channels per module High computing performance with double the banks and double the burst length compared to DDR4 Compatible with 13th Gen Intel Cor™ processors that support DDR5 and DDR5 compatible motherboards
• Model #: SU032GBSVU560F22SN

(27)

• CAS Latency: CL16
• Multi-channel Kit: Dual Channel Kit
• Timing: 16-18-18-38
• Chipset: Major Brand Chipset
• Model #: DDR4-3200-8U-2-GST-RGB-GameTurbo-White

(38)

• CAS Latency: CL22
• Voltage: 1.20V
• Timing: 22-22-22-52
• Buffered/Registered: Unbuffered
• Model #: TED48G3200C2201

(10)

• CAS Latency: CL22
• Voltage: 1.20V
• Features: Complies with JEDEC standards Low voltage of 1.2V for less power consumption 100% tested for stability, durability, and reliability 100% verified for compatibility on mainstream DDR4 motherboards
• Model #: SU008GBSFU320B02SN

• Compatible System: Apple
• Type: 204-Pin DDR3 SO-DIMM
• Rank: 2Rx8
• Parts: Lifetime
• Model #: NE-MAC-0001

(8,015)

• CAS Latency: CL16
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 16-18-18-38
• Model #: F4-3200C16D-64GVK