Memory

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL19
• Voltage: 1.20V
• Part Number: MR21300-628K4
• Model #: MR21300-628K04-457

• Chipset: Major Brand Chipset
• CAS Latency: CL22
• Voltage: 1.20V
• Rank: 2Rx4
• Model #: MEM-DR464MC-ER32 HMAA8GR7AJR4N-XN

(24)

• CAS Latency: CL18
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 18-22-22-42
• Model #: F4-3600C18D-64GTRS

(1)

Limited time offer, ends 09/20

• Part Number: KS3200D4N12032G2
• CAS Latency: CL18
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: AMD & Intel Compatible
• Model #: KS3200D4N12032G2

(4)

Limited time offer, ends 09/20

• Part Number: KS3200D4M13508Gx2-Red
• CAS Latency: CL18
• Multi-channel Kit: Dual Channel Kit
• BIOS/Performance Profile: XMP 2.0
• Model #: KS3200D4M13508G2R

(8)

Limited time offer, ends 09/20

• Part Number: KS3200D4M13516Gx2-Red
• CAS Latency: CL18
• Multi-channel Kit: Dual Channel Kit
• BIOS/Performance Profile: XMP 2.0
• Model #: KS3200D4M13516G2R

• CAS Latency: CL22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Model #: NE-SS-0076

(172)

• CAS Latency: CL19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: Speeds up to 3200 MT/s and faster data rates are expected to be available as DDR4 technology matures Increase bandwidth by up to 30% Reduce power consumption by up to 40% and extend battery life Faster bursts access speeds for improved sequential data throughout Optimized for next generation processors and platforms
• Model #: CT2K32G4SFD8266

(16)

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• BIOS/Performance Profile: Intel XMP 2.0
• Model #: CT2K16G4DFD824A

• Voltage: 1.20V
• Compatible System: Apple Mac Systems
• Rank: 2Rx8
• Parts: Lifetime
• Model #: NE-MAC-0073

(12)

• CAS Latency: CL19
• Model #: 76TT26NUS2R8-32GK2

• Brand: NEMIX RAM
• Series: NEMIX RAM Original Series Memory
• Capacity: 64GB (2 x 32GB)
• Speed: DDR4 3200 (PC4 25600)
• Model #: MD25600-328K2-Q670M-CED4-CSM

• Chipset: Major Brand Chipset
• CAS Latency: CL19
• Voltage: 1.20V
• Rank: 4Rx4 (4DRx4)
• Model #: AT64G8D4D2666LQ4N12V

(6)

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: Speeds start at 2133 MT/s and faster data rates are expected to be available as DDR4 technology matures Increase bandwidth by up to 32% Reduce power consumption by up to 40% Faster burst access speeds for improved sequential data throughput Optimized for next generation processors and platforms Available in four channel kits up to 64GB
• Model #: CT8G4DFD824A

• Voltage: 1.20V
• Compatible System: Dell PowerEdge R430, R530, R630, R630 XL, R730, R730 XL, R730xd, R730xd XL, R830, R930 | 13th Gen Rack Servers
• CAS Latency: CL15
• Part Number: NE-MS-0054
• Model #: NE-MS-0054

• Chipset: Major Brand Chipset
• CAS Latency: CL22
• Voltage: 1.20V
• Rank: 1Rx8
• Model #: AT8G8D4D3200RS8N12V

• Chipset: Major Brand Chipset
• CAS Latency: CL21
• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Model #: AT32G2D4D2933RD4N12V

• Chipset: Major Brand Chipset
• CAS Latency: CL17
• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Model #: AT64G2D4D2400LQ4N12V

(1)

• CAS Latency: CL22
• Model #: 76TT32NUS2R8-32GK2

• Brand: NEMIX RAM
• Capacity: 64GB (2 x 32GB)
• Speed: DDR4 2666 (PC4 21300)
• ECC: Yes
• Model #: ME21300-328K2-SM-SYS-5019C-MR

• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Model #: RSO25600D8C2K64

• Chipset: Samsung Chipset
• CAS Latency: CL19
• Voltage: 1.20V
• Rank: 4Rx4
• Model #: NE-PNR-2253

• CAS Latency: CL19
• Buffered/Registered: Unbuffered
• Parts: Lifetime warranty
• Model #: B0D7MBWNCY

• Brand: PNY
• Capacity: 64GB (2 x 32GB)
• Type: 260-Pin DDR4 SO-DIMM
• Speed: DDR4 3200 (PC4 25600)
• Model #: MN64GK2D43200-TB

• CAS Latency: CL20
• Timing: 20-22-22
• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Model #: KF432S20IBK2/64

• Chipset: Major Brand Chipset
• CAS Latency: CL21
• Voltage: 1.20V
• Rank: 2Rx4
• Model #: 5053772486379

• CAS Latency: CL15
• Multi-channel Kit: Quad Channel Kit
• Type: 288-Pin DDR4 SDRAM
• Model #: KVR21R15D4K4/64

• CAS Latency: CL22
• Type: 288-Pin DDR4 SDRAM
• Rank: 2Rx4
• Model #: hynix-64gb-reg-2rx4-3200

• Chipset: Major Brand Chipset
• CAS Latency: CL19
• Voltage: 1.20V
• Rank: 2S2Rx4 (4Rx4 3DS/TSV)
• Model #: AT64G8D4D2666RQ4N12V

• CAS Latency: CL19
• Features: With decades of experience specializing in memory and server parts, Black Diamond Memory is a proven manufacturer in the industry. Our products currently support over 200,000 configurations as well as support for enterprise servers, desktops, laptops, and a large variety of other devices.
• Model #: BD32GX22666MQN28

• Type: 288-Pin DDR4 SDRAM
• Model #: MEM-DR464L-CL02-LR24

• Chipset: Micron Chipset
• CAS Latency: CL22
• Timing: 22-22-22
• Voltage: 1.20V
• Model #: MTA36ASF8G72PZ-3G2E1

• Chipset: Micron Chipset
• CAS Latency: CL22
• Timing: 22-22-22
• Voltage: 1.20V
• Model #: MTA36ASF8G72PZ-3G2B2

• Chipset: Samsung Chipset
• CAS Latency: CL22
• Voltage: 1.20V
• Rank: 2Rx4
• Model #: MEM-DR464L-SL01-ER32

• Chipset: Micron Chipset
• CAS Latency: CL19
• Voltage: 1.20V
• Type: 288-Pin DDR4 SDRAM
• Model #: MTA72ASS8G72LZ-2G6D2

• Chipset: Major Brand Chipset
• CAS Latency: CL15
• Voltage: 1.20V
• Multi-channel Kit: Quad Channel Kit
• Model #: AT64G4D4D2133RO4N12V

• CAS Latency: CL22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: hynix-32gb-so-3200 X2

• Chipset: Major Brand Chipset
• CAS Latency: CL21
• Voltage: 1.20V
• Rank: 2Rx4
• Model #: 5053772478572