Memory

(328)

• CAS Latency: CL22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT16G4SFRA32A

(328)

• CAS Latency: CL22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT8G4SFRA32A

(328)

• CAS Latency: CL22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT2K8G4SFRA32A

• CAS Latency: CL11
• Voltage: 1.35V
• Recommend Use: AMD & Intel Compatible
• Model #: AT8G2D3S1600ND8N135V

• CAS Latency: CL22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Recommend Use: AMD & Intel Compatible
• Model #: NE-SS-0060

(462)

• CAS Latency: CL22
• Timing: 22-22-22-53
• Voltage: 1.20V
• Features: 32GB (2x16GB) DDR4 SODIMM kit for 8th Generation or newer Intel Core i7, and AMD Ryzen 4000 Seires notebooks 3200MHz 22-22-22-53 latency 1.2V Auto-overclocking with compatible notebooks (no BIOS configuration required)
• Model #: CMSX32GX4M2A3200C22

(10)

• CAS Latency: CL22
• Voltage: 1.20V
• Features: Complies with JEDEC standards Low voltage of 1.2V for less power consumption 100% tested for stability, durability, and reliability 100% verified for compatibility on mainstream DDR4 motherboards
• Model #: SU008GBSFU320B02SN

• CAS Latency: CL40
• Voltage: 1.10V
• Recommend Use: AMD & Intel Compatible
• Parts: Lifetime
• Model #: NE-SS-0089

(462)

• CAS Latency: CL40
• Timing: 40-40-40-77
• Voltage: 1.10V
• Model #: CMSX32GX5M1A4800C40

• CAS Latency: CL40
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Features: HMCG66AGBSA, HMCG66AGBSA092N, HMCG66AGBSA095N
• Model #: NE-PNR-1873

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR3 Orignial Series 204-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 16GB (2 x 8GB)
• Type: 204-Pin DDR3 SO-DIMM
• Model #: MS12800-828LK02-514

• CAS Latency: CL11
• Voltage: 1.35V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD12800-828LK04-517

• CAS Latency: CL9
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: AMD & Intel Compatible
• Model #: NE-SS-0019

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR3 Orignial Series 204-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 8GB (2 x 4GB)
• Type: 204-Pin DDR3 SO-DIMM
• Model #: MS8500-428K02-722

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR2 Orignial Series 200-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 4GB (2 x 2GB)
• Type: 200-Pin DDR2 SO-DIMM
• Model #: MS5300-228K02-710

• Model #: 305340056060

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR2 Orignial Series 200-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 4GB (2 x 2GB)
• Type: 200-Pin DDR2 SO-DIMM
• Model #: MS6400-228K02-716

• CAS Latency: CL9
• Voltage: 1.50V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD10600-428LK01-641

• CAS Latency: CL11
• Voltage: 1.35V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD12800-828K02-499

(3)

• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Features: v-color DDR4 32GB (2x16GB) 2400MHz (PC4-19200) SO-DIMM SK Hynix IC Laptop Memory Model
• Model #: TN416G24D817-VC

Limited time offer, ends 03/08

• Part Number: KS3200D4N12016G
• CAS Latency: CL18
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: AMD & Intel Compatible
• Model #: KS3200D4N12016G

(3)

• CAS Latency: CL46
• Voltage: 1.10V
• Features: 5600MT/s grants faster transmission speeds and higher bandwidth than DDR4 1.5x faster than standard 3200MT/s DDR4 to provide multi-core CPUs with extreme responsiveness Available in 8GB, 16GB, and 32GB module densities Doubled chip unit capacity compared to DDR4 (from 16GB to 32GB) for seamless multi-tasking Low voltage of 1.1V for less power consumption Improved reliability versus DDR4 with On-Die Error Correction Code (ECC) Optimized efficiency with two independent 32-bit channels per module High computing performance with double the banks and double the burst length compared to DDR4 Compatible with 13th Gen Intel Cor™ processors that support DDR5 and DDR5 compatible motherboards
• Model #: SU032GBSVU560F22SN

• Brand: V-Color
• Capacity: 16GB
• Type: 260-Pin DDR4 SO-DIMM
• Speed: DDR4 3200 (PC4 25600)
• Model #: TN416G32D822

• CAS Latency: CL9
• Voltage: 1.50V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD10600-828LK01-638

• CAS Latency: CL7
• Voltage: 1.50V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD8500-828K02-625

• CAS Latency: CL5
• Voltage: 1.80V
• Buffered/Registered: Unbuffered
• Recommend Use: AMD & Intel Compatible
• Model #: AT2G1D2S667NA0N18V

• Buffered/Registered: Unbuffered
• Part Number: M425R1GB4PB0-CWM
• Features: M425R1GB4PB0-CWM
• Model #: M425R1GB4PB0-CWM

• CAS Latency: CL22
• Buffered/Registered: Unbuffered
• Parts: Lifetime warranty
• Model #: B0D7LZX7PK

• CAS Latency: CL40
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Features: HMCG78AGBSA, HMCG78AGBSA092N, HMCG78AGBSA095N
• Model #: NE-PNR-1875

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR4 Orignial Series 260-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 8GB
• Type: 260-Pin DDR4 SO-DIMM
• Model #: 0759170878659

• CAS Latency: CL21
• Voltage: 1.20V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: 0759170870707

• Brand: NEMIX RAM
• Series: Hynix Laptop, AIO All-in-One PC Compatible Series Memory
• Capacity: 16GB
• Speed: DDR4 3200 (PC4 25600)
• Model #: MS25600-628K1-HMA82GS6CJR8N-XN

• CAS Latency: CL21
• Voltage: 1.20V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: 0759170870660

(47)

• CAS Latency: CL13
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Model #: CT2K102464BF186D

• CAS Latency: CL15
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: CMSO8GX4M1A2133C15
• Model #: NE-PNR-1597