Memory

• Compatible System: Dell OptiPlex 9020, 9010, 7020, 7010, 3020, 3010, XE2 (USFF/SFF/MT/DT)
• CAS Latency: CL11
• Part Number: NE-MS-0002
• Type: 240-Pin DDR3 SDRAM
• Model #: NE-MS-0002

(81)

• CAS Latency: CL46
• Voltage: 1.10V
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: Compatible with 12th Gen Intel® Core™ or AMD RyzenTM 7000 Series Desktop CPUs and above
• Model #: CP2K32G56C46U5

(124)

• CAS Latency: CL22
• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: Compatible with 8th–13th Gen Intel® Core and AMD Ryzen™ 1000–5000 Series Desktop CPUs
• Model #: CP2K32G4DFRA32A

(124)

• CAS Latency: CL22
• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: Compatible with 8th–13th Gen Intel® Core and AMD Ryzen™ 1000–5000 Series Desktop CPUs
• Model #: CP2K16G4DFRA32A

• Type: 204-Pin DDR3 SO-DIMM
• Model #: M471B1G7B0-YK0

• Voltage: 1.50V
• Compatible System: Apple Mac Systems
• Rank: 2Rx8
• Parts: Lifetime
• Model #: NE-MAC-0041

(2)

• CAS Latency: CL19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: 631719218792

(81)

• CAS Latency: CL46
• Voltage: 1.10V
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: Compatible with 12th Gen Intel® Core™ or AMD RyzenTM 7000 Series Desktop CPUs and above
• Model #: CP2K48G56C46U5

• Voltage: 1.50V
• Compatible System: Apple Mac Systems
• Rank: 2Rx8
• Parts: Lifetime
• Model #: NE-MAC-0045

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL19
• Voltage: 1.35V
• Part Number: MD21300-628K2
• Model #: MD21300-628K2-DL-PET150

(72)

• CAS Latency: CL40
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• BIOS/Performance Profile: Intel XMP 3.0
• Model #: CT2K16G48C40U5

• Model #: 9100513082928

(60)

• CAS Latency: CL19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: CT2K16G4DFD8266 is a 32GB Kit consisting of (2) 16GB DDR4 desktop modules that operates at speeds up to 2666 MT/s and has a CL19 latency. It is an Unbuffered DIMM. It conforms to the industry standard DDR4 ECC UDIMM layout of 288 pins and is compatible with systems that take DDR4 2666 MT/s UDIMM memory.
• Model #: CT2K16G4DFD8266

• Voltage: 1.20V
• Compatible System: Apple Mac Systems
• Rank: 2Rx8
• Parts: Lifetime
• Model #: NE-MAC-0073

• CAS Latency: CL7
• Voltage: 1.50V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD8500-828K02-625

(72)

• CAS Latency: CL40
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• BIOS/Performance Profile: Intel XMP 3.0
• Model #: CT2K32G48C40U5

(81)

• CAS Latency: CL46
• Voltage: 1.10V
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: Compatible with 12th Gen Intel® Core™ or AMD RyzenTM 7000 Series Desktop CPUs and above
• Model #: CP2K16G56C46U5

• Voltage: 1.80V
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: AMD & Intel Compatible
• Buffered/Registered: Unbuffered
• Model #: AT2G2D2D800NA018V

• Voltage: 1.20V
• Compatible System: Apple Mac Systems
• Rank: 2Rx8
• Parts: Lifetime
• Model #: NE-MAC-0074

• CAS Latency: CL11
• Voltage: 1.35V
• Recommend Use: AMD & Intel Compatible
• Model #: AT8G2D3S1600ND8N135V

OUT OF STOCK

• Brand: G.SKILL
• Series: T5 Neo Series
• Capacity: 128GB (4 x 32GB)
• Speed: DDR5 6400 (PC5 51200)
• Model #: F5-6400R3239F32GQ4-T5N

• Brand: OWC
• Capacity: 4GB (2 x 2GB)
• Type: 200-Pin DDR2 SO-DIMM
• Speed: DDR2 667 (PC2 5300)
• Model #: OWC5S3D22R8004P-B958-SF

• CAS Latency: CL40
• Voltage: 1.10V
• Chipset: Major Brand Chipset
• Recommend Use: AMD & Intel Compatible
• Model #: AT8G1D5D4800NS16N11V

• CAS Latency: CL15
• Voltage: 1.20V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD17000-818K02-681

(41)

• CAS Latency: CL22
• Voltage: 1.20V
• Timing: 22-22-22
• Buffered/Registered: Unbuffered
• Model #: CT32G4DFD832A

(3)

• Part Number: TMXFCL1682838KS-DK
• Timing: 38-48-48-128
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Model #: TMXFCL1682838KS-DK

• CAS Latency: CL9
• Voltage: 1.50V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD10600-828LK01-638

• Voltage: 1.35V
• Compatible System: Apple Mac Systems
• Rank: 2Rx8
• Parts: Lifetime
• Model #: NE-MAC-0046

• CAS Latency: CL19
• Multi-channel Kit: Dual Channel Kit
• Buffered/Registered: Unbuffered
• Model #: RLMUD-21300-2/16-28

• CAS Latency: CL21
• Voltage: 1.20V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: 0759170870660

• CAS Latency: CL9
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: AMD & Intel Compatible
• Model #: NE-SS-0019

• Voltage: 1.20V
• Compatible System: Apple Mac Systems
• Rank: 1Rx8
• Parts: Lifetime
• Model #: NE-MAC-0100

(3)

• CAS Latency: CL46
• Voltage: 1.10V
• Features: 5600MT/s grants faster transmission speeds and higher bandwidth than DDR4 1.5x faster than standard 3200MT/s DDR4 to provide multi-core CPUs with extreme responsiveness Available in 8GB, 16GB, and 32GB module densities Doubled chip unit capacity compared to DDR4 (from 16GB to 32GB) for seamless multi-tasking Low voltage of 1.1V for less power consumption Improved reliability versus DDR4 with On-Die Error Correction Code (ECC) Optimized efficiency with two independent 32-bit channels per module High computing performance with double the banks and double the burst length compared to DDR4 Compatible with 13th Gen Intel Cor™ processors that support DDR5 and DDR5 compatible motherboards
• Model #: SU032GBSVU560F22SN

• CAS Latency: CL6
• Voltage: 1.80V
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Model #: AT2G2D2S800NA0N18V

• Voltage: 1.20V
• Compatible System: Apple Mac Systems
• Rank: 2Rx8
• Parts: Lifetime
• Model #: NE-MAC-0060

• CAS Latency: CL5
• Voltage: 1.8V
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: Desktops
• Model #: OWC5U3D22R8008S-B959-SF